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Si4134DY
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
I D (A)
V DS (V)
30
R DS(on) ( ? )
0.014 at V GS = 10 V
0.0175 at V GS = 4.5 V
14
12.5
a
Q g (Typ.)
7.3 nC
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? 100 % R g and UIS Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SO-8
? DC/DC Conversion
- Notebook System Power
D
S
S
S
1
2
3
8
7
6
D
D
D
G
4
5
D
G
Top V ie w
S
Orderin g Information: Si4134DY-T1-E3 (Lead (P b )-free)
Si4134DY-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
14
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
11.2
9.9 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
7.9 b, c
32
4.1
2.0 b, c
15
11.25
A
mJ
T C = 25 °C
5
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
3.2
2.5 b, c
W
T A = 70 °C
1.6 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Foot (Drain)
t ? 10 s
Steady State
R thJA
R thJF
38
20
50
25
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 85 °C/W.
Document Number: 68999
S11-0650-Rev. C, 11-Apr-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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